Palais, O.Hidalgo Alcalde, PedroMartinuzzi, S.2023-06-202023-06-202004-071286-004210.1051/epjap:2004048https://hdl.handle.net/20.500.14352/51059© E D P Sciences. International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP 10) (10. 2003. Batz sur Mer, Francia)The kinetics of "metal-acceptor" pairing in boron-doped multicrystalline samples are investigated by means of contactless lifetime measurement. The case of FeB and CrB pairs is discussed and the influence of extended defect is evidenced for FeB. It is found that the reassociation of the "metal-acceptor" pairs is fast immediately after the dissociation and then slows down for several days. The results allow the identification of mixed contamination by Cr and Fe.journal articlehttp://dx.doi.org/10.1051/epjap:2004048http://www.epjap.orgmetadata only access538.9Surface PhotovoltageSiliconIronFísica de materiales