Mártil de la Plaza, IgnacioGonzález Díaz, Germán2023-06-202023-06-202000-04[1] Sitbon, S., Hugon, M.C., Agins, B., Abel, F., Courant, J.L., Puech, M.. J. Vac. Sci. Technol., 1995, A13(6), 2900. [2] Kapila, A., Si, X., Malhora, V., Appl. Phys. Lett., 1993, 62 (18), 2259. [3] García, S., Mártil, I., González-Díaz, G., Castán, H., Dueñas, S., J. Appl. Phys., 1998,83 (1), 600. [4] Redondo, E., Blanco, N., Mártil, I., González-Díaz, G., Peláez, R., Dueñas, S., Castán, H., J. Vac. Sci. Technol., 1999, A17 (4), 2178. [5] Dueñas, S., Peláez, R., Castán, H., Pinacho, R., Quintanilla, L., Barbolla, J., Mártil, I., Redondo, E., González-Díaz, G., J. Mater. Sci.: Mater. Electron., 1999, 10, 373. [6] Peláez, R., Castán, H., Dueñas, S., Barbolla, J., Redondo, E., Mártil, I., González-Díaz, G., J. Appl. Phys., 1999, 86 (12), 6944. [7] Lau, W.S., Fonash, S.J., Kanicki, J., J. Appl. Phys. 1989, 66, 2765. [8] He, L., Hasegawa, H., Sawada, T., Ohno, H., J. Appl. Phys., 1988, 63, 2120. [9] He, L., Hasegawa, H., Sawada, T., Ohno, H., Jpn. J. Appl. Phys.: Part 1, 1988, 27, 512. [10] Dueñas, S., Peláez, R., Castán, H., Pinacho, R., Quintanilla, L., Barbolla, J., Mártil, I., González-Díaz, G., Appl. Phys. Lett., 1997, 71 (6), 826.0026-271410.1016/S0026-2714(99)00325-Xhttps://hdl.handle.net/20.500.14352/59244Workshop on Dielectrics in Microelectronics (10. 2000. Barcelona). © Elsevier Science Ltd.In this article, we study the influences of the rapid thermal annealing temperature and dielectric composition on the electrical characteristics of ECR-deposited silicon nitride SiNx:H-InP and SiNx:H-InGaAs interfaces. C-V deep level transient spectroscopy (DLTS) and conductance transient analysis have been applied. As for InP cases, DLTS results reveal that rapid thermal annealing application increases interfacial state density. In contrast, transient conductance measurements show that disorder induced gap-state (DIGS) damage density diminishes when RTA is applied. So, we can conclude that RTA treatments take out the insulator damage to the interface. In the InGaAs-n cases, we have observed that DIGS damage evolution with RTA temperature is opposite to the interfacial state density. This behaviour seems to suggest some temperature activated defect exchange between the insulator and the interface. Finally, as for the insulator composition influence on the interface quality of the InGaAs-n samples, DLTS results suggest that the intermediate x values (1.43 and 1.50) provide better interfaces than extreme x values. Conductance transient measurements add complementary information: insulator damage increases when x increases. Hence, x = 1.43 seems to be the best choice to improve the overall interface quality. (C) 2000 Elsevier Science Ltd. All rights reserved.engjournal articlehttp://dx.doi.org/10.1016/S0026-2714(99)00325-Xhttp://www.sciencedirect.comopen access537Electrical-PropertiesDevicesFilms.ElectricidadElectrónica (Física)2202.03 Electricidad