Piqueras De Noriega, Francisco JavierMéndez Martín, María BianchiPanin, G. N.Dutta, P. S.Dieguez, E.2023-06-202023-06-2019960-7803-3223-7https://hdl.handle.net/20.500.14352/60822© 1996 IEEE. 1996 International Semiconductor Conference (CAS 96) (1996.Sinaia, Romania)Cathodoluminescence in the scanning electron microscope is used to ivestigate growth and prosess induced defects in GaSb crystals. In particular, luminescence emission has been used to study the nature of acceptor defects present after different annealing and irradiation treatments.engbook parthttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=557426http://ieeexplore.ieee.orgopen access538.9EngineeringElectrical & ElectronicFísica de materiales