Hidalgo Alcalde, PedroMéndez Martín, María BianchiPiqueras De Noriega, Francisco JavierDutta, P.S.Diéguez, E.2023-06-202023-06-2019980038-109810.1016/S0038-1098(98)00445-1https://hdl.handle.net/20.500.14352/58956© 1998 Elsevier Science Ltd. All rights reserved. Acknowledgements—GrowtThis work was supported by DGES (PB96-0639) and by CICYT (ESP95-0148 and 95-0086-OP).The effect of aluminium on the defect structure of GaSb crystals, grown by the vertical Bridgman technique, has been investigated by cathodoluminescence (CL) in the scanning electron microscope. Crystals have been found to be highly homogeneous along the growth axis with the exception of the top end which showed Al accumulation. The CL results show decoration of extended defects by Al but contrary to the case of other dopants Al has not been found to cause a significative reduction of native accepters. A CL band at about 850 meV appears to be related to the presence of aluminium.engjournal articlehttp://www.sciencedirect.com/science/article/pii/S0038109898004451http://www.sciencedirect.comopen access538.9Liquid-Phase EpitaxyGallium AntimonideDoped GasbGrowthFísica de materiales