Gomez, I.Domínguez-Adame Acosta, FranciscoDíez Alcántara, EduardoBellani, V.2023-06-202023-06-201999-04-010021-897910.1063/1.369764https://hdl.handle.net/20.500.14352/59361© 1999 American Institute of Physics. Work at Madrid has been supported by CAM (Spain) under Project No. 07N/0034/1998.We study the electron transmission probability in semiconductor superlattices where the height of the barriers is modulated by a Gaussian profile. Such structures act as efficient energy band-pass filters and, contrary to previous designs, it is expected to present a lower number of unintentional defects and, consequently, better performance. The j-V characteristic presents negative differential resistance with peak-to-valley ratios much greater than in conventional semiconductor superlattices.engjournal articlehttp://dx.doi.org/10.1063/1.369764http://scitation.aip.org/open access538.9PhysicsAppliedFísica de materiales