Hidalgo Alcalde, PedroMéndez Martín, María BianchiPiqueras De Noriega, Francisco JavierDutta, P: S.Dieguez, E.2023-06-202023-06-201999-100268-124210.1088/0268-1242/14/10/304https://hdl.handle.net/20.500.14352/58940© 1999 IOP Publishing Ltd. This work has been supported by the DGES (project No PB96-0639) and CICYT (projects ESP95-0148 and ESP98-1340).The luminescence properties of In doped GaSb single crystals have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. It has been found that indium induces a certain reduction on the native acceptor concentration in contrast to what occurs with other isoelectronic dopants (e.g. aluminium). Large In concentrations lead to the formation of the ternary compound In_xGa_(1-x)Sb as revealed by CL spectra and x-ray measurements. In particular, a luminescence band and x-ray diffraction peaks observed in highly doped samples are attributed to the presence of In_xGa_(1-x)Sb.engjournal articlehttp://iopscience.iop.org/0268-1242/14/10/304http://iopscience.iop.orgopen access538.9Gallium AntimonideFísica de materiales