Martil De La Plaza, IgnacioGonzález Díaz, GermánGarcía, S.Martín, J.M.Fernández, M.2023-06-202023-06-201998-04-010040-609010.1016/S0040-6090(97)00510-5https://hdl.handle.net/20.500.14352/59296European Vacuum Conference (EVC 5) / International Conference on Thin Films (ICTF 10) (5th / 10th. 1996. Salamanca, Spain). (C) Elsevier Science SA.The influence of the gas flow ratio (R) (O-2/SiH4 and N-2/SiH4) and the deposition temperature on the physical properties of SiOy and SiNx:H thin films deposited by the ECR-CVD method is analyzed. Two deposition regimes limited by R = 1, are found for SiOy films. At R < 1, films are very Si-rich in nature, with [O]/[Si] ratios as low as 0.55. At R > 1, the [O]/[Si] ratio varies between 1.69 and 1.88 and the full width at half maximum of the Si-O stretching peak is almost kept constant at 90 cm(-1). The effect of increasing substrate temperatures is mainly to promote a nearest stoichiometric character of the films. The two deposition regimes described agree with the optical diagnosis of the discharge, that present Si related species in those created at R < 1, and OH and O-2(+) species in those created at R > I. A similar trend is observed for the deposition of SiNx:H films, for which the limiting gas flow ratio is also R = I. At R < 1, the films are very Si-rich (x less than or equal to 0.38), meanwhile at R > 1, the composition corresponds to near stoichiometric and N-rich films (x = 0.91-1.49). The main effect of the substrate temperature is to reduce the hydrogen content of the films. Both SiOy and SINx:H films are used in Si-based MIS structures, for those the minimum density of interface states is 3 X 10(11) cm(-2) eV(-1).engjournal articlehttp://dx.doi.org/10.1016/S0040-6090(97)00510-5http://www.sciencedirect.com/open access537Chemical-Vapor-DepositionSilicon-NitrideHydrogen ContentH FiolmsRoom-TemperatureAmorphous Sinx.ElectricidadElectrónica (Física)2202.03 Electricidad