Wirths, S.Pampillón Arce, María ÁngelaSan Andrés Serrano, EnriqueStarge, D.Tiedemann, A.T.Mussler, G.Fox, A.Breuer, U.Hartmann, J-M.Mantl, S.Buca, D.2023-06-192023-06-19201410.1109/istdm.2014.6874645https://hdl.handle.net/20.500.14352/34882© 2014 IEEE. International Silicon-Germanium Technology and Device Meeting (ISTDM) (7. 2014. Singapore).Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These results mark a first step towards electronic device integration of low bandgap highly tensely strained group IV semiconductors.engjournal articlehttp://dx.doi.org/10.1109/istdm.2014.6874645http://ieeexplore.ieee.org/open access537ElectricidadElectrónica (Física)2202.03 Electricidad