Castaldini, A.Cavallini, A.Fraboni, B.Piqueras De Noriega, Francisco Javier2023-06-202023-06-201994-120921-510710.1016/0921-5107(94)90091-4https://hdl.handle.net/20.500.14352/59265© 1994 Published by Elsevier B.V. International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 94) (2. 1994. Parma, Italia)The disappearance of the electron trap at E_t=E_c-0.82 eV (EL2) level in highly doped samples, observed in the literature for N_D-N_A>1x10^17 cm^(-3) has been assessed by junction spectroscopy investigations of liquid-encapsulated Czochralski GaAs:Te with N_D-N_A up to about 7x10^17 cm^(-3). By choosing appropriate spectroscopy methods, we have detected the EL2 peak, even in the most doped sample. This shows that such a defect is present in the material, but its detection is controlled by the quasi-Fermi level position in the gap, which also affects the Schottky diode operating conditions.journal articlehttp://dx.doi.org/10.1016/0921-5107(94)90091-4http://www.sciencedirect.commetadata only access538.9DefectBulkFísica de materiales