Martil De La Plaza, IgnacioGonzález Díaz, GermánSan Andrés Serrano, Enrique2023-06-202023-06-202005-050026-271410.1016/j.microrel.2004.11.012https://hdl.handle.net/20.500.14352/51116Workshop on Dielectrics in Micoelectronics (WoDiM 2004) (13. 2004. Cork, Irlanda). © 2004 Elsevier Ltd. All rights reserved.We investigate the influence of the used cleaning method and rapid thermal annealing (RTA) conditions on the electrical characteristics of MIS devices based on SiNy:H/SiOx dielectric stack structures fabricated by electron-cyclotron-resonance plasma assisted chemical vapour deposition (ECR-CVD). We use capacitance-voltage (C-P) technique to study charge trapped in the insulator, Deep Level Transient Spectroscopy (DLTS) to study the trap distributions at the interface, and conductance transient (G-t) technique to determine the energy and geometrical profiles of electrically active defects at the insulator bulk as these defects follow the disorder-induced gap state (DIGS) model.engjournal articlehttp://dx.doi.org/10.1016/j.microrel.2004.11.012http://www.sciencedirect.comopen access537Films.ElectricidadElectrónica (Física)2202.03 Electricidad