Mártil de la Plaza, IgnacioGonzález Díaz, GermánMartín, J.M.García, S.2023-06-202023-06-201998-08[1] S.M. Sze, Physics of Semiconductor Devices, 2nd ed., New York: Wiley, 1981, pp. 133–156. [2] D.J. Roulston, Bipolar Semiconductor Devices, New York: McGraw-Hill, 1990, pp. 178–181, 212–220, and 226–229. [3] M.S. Tyagi, Introduction to Semiconductor Materials and Devices, New York: Wiley, 1991, pp. 385–398 and 414–418. [4] S. Natarajan, “An effective approach to obtain model parameters for BJTS and FETS from data books,” IEEE Trans. Educ., vol. 35, pp. 164–169, 1992. [5] N.R. Malik, “Determining SPICE parameter values for BJT’s,” IEEE Trans. Educ., vol. 33, pp. 366–368, 1990. [6] A. Sconza, G. Torzo, and G. Viola, “Experiment on the physics of the PN junction,” Amer. J. Phys., vol. 62, pp. 66–70, 1994. [7] J.J. Ebers and J. L. Moll, “Large-signal behavior of junction transistors,” Proc. IRE, vol. 42, pp. 1761–1772, 1954. [8] H.K. Gummel, “Measurements of the number of impurities in the base layer of a transistor,” Proc. IRE, vol. 49, p. 834, 1961. [9] D.L. Pulfrey and N. Garry Tarr, Introduction to Microelectronic Devices, Englewood Cliffs, NJ: Prentice-Hall, 1989, pp. 366–367. [10] C.T. Sah, R.N. Noyce, and W. Shockley, “Carrier generation and recombination in pn junction and pn junction characteristics,” Proc. IRE, vol. 45, pp. 1228–1243, 1957. [11] I. Mártil and G. González-Díaz, “A laboratory experiment for DC characterization of PN devices,” Eur. J. Phys., vol. 12, pp. 148–152, 1991. [12] M.L. Lucía, J.L. Hernández-Rojas, C. León, and I. Mártil, “Capacitance measurements on pn junctions: Depletion layer and diffusion capacitance contributions,” Eur. J. Phys., vol. 14, pp. 86–89, 1993. [13] B.R. Chawla and H.K. Gummel, “Transition region capacitance of diffused pn junctions,” IEEE Trans. Electron Devices vol. ED-18, pp. 178–195, 1971. [14] J.J.H. Van den Biesen, “P-N junction capacitances. Part I: The depletion capacitance,” Phillips J. Res., vol. 40, pp. 88–102, 1985. --- “P-N junction capacitances. Part II: The neutral capacitance,” Phillips J. Res., vol. 40, pp. 103–113, 1985.0018-935910.1109/13.704551https://hdl.handle.net/20.500.14352/59292© IEEE.We present an electrical characterization of discrete Bipolar Junction Transistor (BJT) devices with nonuniform doped emitter and base zones. The measurement of the I-V and C-V characteristics of the emitter-base and the collector-base junctions and the common emitter current gain allows to determine relevant parameters of the device. These are the built-in voltage of both junctions, the impurity gradient profiles, the electrical area of both junctions, the base and the emitter Gummel numbers, and the collector doping, The whole experiment can be conducted in a laboratory session of 3-4-hour length and it is specifically addressed to students taking lectures in semiconductor device physics. The results obtained give a deep insight into both the physical structure and the physical processes involved in the transistor behavior.engjournal articlehttp://dx.doi.org/10.1109/13.704551http://ieeexplore.ieee.org/open access537CapacitancesBJTS.ElectricidadElectrónica (Física)2202.03 Electricidad