Clemente Barreira, Juan AntonioFranco Peláez, Francisco JavierVila, FrancescaBaylac, MaudRamos Vargas, Pablo FranciscoVargas Vallejo, Vanessa CarolinaMecha López, HortensiaAgapito Serrano, Juan AndrésVelazco, Raoul2023-06-182023-06-182015-09-18978-1-5090-0232-010.1109/RADECS.2015.7365640https://hdl.handle.net/20.500.14352/24709©IEEE 2015 European Conference on Radiation and Its Effects on Components and Systems (RADECS 2015) (15. 2015. Moscú). Date of Conference: 14-18 Sept. 2015This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event upsets. The physical mechanisms are briefly discussed.engNeutron-Induced single events in a COTS soft-error free SRAM at low bias voltageSucesos Aislados inducidos por neutrones en una memoria estática de acceso aleatorio comercial a tensiones ultrabajasbook parthttp://dx.doi.org/10.1109/RADECS.2015.7365640http://www.radecs2015.orghttp://ieeexplore.ieee.org/open access537.8539.16621.3.049.77COTSLPSRAMNeutron testsRadiation hardnessReliabilitySoft errorSRAMElectrónica (Física)RadiactividadCircuitos integrados2203.07 Circuitos Integrados