Domínguez-Adame Acosta, FranciscoPiqueras De Noriega, Francisco JavierFernández Sánchez, Paloma2023-06-202023-06-201991-01-210003-695110.1063/1.104681https://hdl.handle.net/20.500.14352/59289© 1991 American Institute of Physics. This work was supported by the Comisibn Interministerial de Ciencia y Tecnologia (Project PB86-0151) . The authors thank Wacker-Chemitronic (Dr. K. Liihnert) for providing the samples and Dr. P. Moser (C.E.N.G.Grenoble) for the electron irradiation.Near-infrared cathodoluminescence (CL) in the scanning electron microscope has been used to characterize GaP:S. Spectra of as-grown crystals show a broadband at about 1240 nm, probably related to P(Ga) antisite defects. This emission has been found to be higher at dislocations giving a CL image opposite to the visible CL image.engjournal articlehttp://dx.doi.org/10.1063/1.104681http://scitation.aip.orgopen access538.9Vacancy DefectsFísica de materiales