Nogales Díaz, EmilioMontone, A.Cardellini, F.Méndez Martín, María BianchiPiqueras De Noriega, Francisco Javier2023-06-202023-06-202002-121454-4164https://hdl.handle.net/20.500.14352/58923© Natl Inst Optoelectronics. This work was supported by MCYT (Project MAT2000-2119). R.P. acknowledges MECD for the research grant SB 2000-0164.The processes of the characteristic radiative transition of Er3+ ions involved in optically active centers in nano-crystalline silicon have been studied by photo-luminescence (PL) and cathodo-luminescence (CL). Infrared emission is observed in cathodo-luminescence and in photoluminescence spectrum excited with photons of 488 nm. The maximum intensity at 1540 nm was obtained under photons excitation and is about ten times higher in nanocrystalline silicon doped with Er and O than in Er doped crystalline silicon.engjournal articlehttp://joam.inoe.ro/arhiva/pdf4_4/Plugaru.pdfhttp://joam.inoe.roopen access538.9Visible LuminescenceAmorphous-SiliconLocal-StructureDoped SiliconSiErFilmsElectroluminescenceEmissionCentersFísica de materiales