Alonso Orts, ManuelNogales Díaz, EmilioMéndez Martín, María BianchiRigby, Oliver M.Stamp, Alice V.Hindmarsh, Steve A.Sánchez, Ana M.2023-06-172023-06-172019-02-010957-448410.1088/1361-6528/aaefc4https://hdl.handle.net/20.500.14352/12999© 2019 IOP Publishing We thank JJP Peters for his input on the multislice ADF simulation. This work has been supported by MINECO projects MAT-2015-65274-R/FEDER and M-ERANET PCIN-2017-106. MA-O acknowledges financial support from MECD (FPU contract).beta-Ga_2O_3 intergrowths have been revealed in the SnO_2 rutile structure when SnO_2/Ga_2O_3 complex nanostructures are grown by thermal evaporation with a catalyst-free basis method. The structure is formed by a Ga_2O_3 nanowire trunk, around which a rutile SnO_2 particle is formed with [001] aligned to the [010] Ga_2O_3 trunk axis. Inside the SnO_2 particle, beta-Ga_2O_3 units occur separated periodically by hexagonal tunnels in the (210) rutile plane. Orange (620 nm) optical emission from tin oxide, with a narrow linewidth indicating localised electronic states, may be associated with this beta-Ga_2O_3 intergrowth.engAtribución-NoComercial-SinDerivadas 3.0 Españahttps://creativecommons.org/licenses/by-nc-nd/3.0/es/journal articlehttp://dx.doi.org/10.1088/1361-6528/aaefc4http://iopscience.iop.orgopen access538.9Sno2OxideGrowthPhotoluminescencePerformanceWide band gap oxidesTransmission electron microscopyTunnelled intergrowthCathodoluminescenceFísica de materialesFísica del estado sólido2211 Física del Estado Sólido