Martil De La Plaza, IgnacioGonzález Díaz, GermánOlea Ariza, Javier2023-06-202023-06-202009-01-260003-695110.1063/1.3077202https://hdl.handle.net/20.500.14352/44248© 2009 American Institute of Physics. This work has been supported by the project FULL SPECTRUM (Grant No. SES6-CT-2003-502620) funded by the European Commission, by the Regional Government of Madrid within the project NUMANCIA (Grant No. S-0505/ENE/000310), and by the Spanish National Research Program within the project GENESIS-FV (Grant No. CSD2006-0004).The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR for ultrahigh DL dilutions as a result of the delocalization of the impurity electron wave functions. Carrier lifetime measurements on Si wafers doped with Ti in the 10(20)-10(21) cm(-3) concentration range show an increase in the lifetime, in agreement with the NRR suppression predicted and contrary to the classic understanding of DL action.engjournal articlehttp://dx.doi.org/10.1063/1.3077202http://scitation.aip.orgopen access537Solar-CellsRecombinationDiffusion.ElectricidadElectrónica (Física)2202.03 Electricidad