Domínguez-Adame Acosta, Francisco2023-06-202023-06-201996-02-190375-960110.1016/0375-9601(95)00976-0https://hdl.handle.net/20.500.14352/60218© Elsevier This work is supported by CICYT (Spain) through project MAT95-0325.We study the electron dynamics in a two-band δ-doped semiconductor within the envelope-function approximation. Using a simple parametrization of the confining potential arising from the ionized donors in the δ-doping layer, we are able to find exact solutions of the Dirac-type equation describing the coupling of host bands. As an application we then consider Si δ-doped GaAs. In particular we find that the ground subband energy scales as a power law of the Si concentration per unit area in a wide range of doping levels. In addition, the coupling of host bands leads to a depression of the subband energy due to nonparabolicity effects.engjournal articlehttp://dx.doi.org/10.1016/0375-9601(95)00976-0http://www.sciencedirect.comopen access538.9Doping layerGaasMbeFísica de materialesFísica del estado sólido2211 Física del Estado Sólido