Martil De La Plaza, IgnacioGonzález Díaz, GermánPrado Millán, Álvaro DelSan Andrés Serrano, Enrique2023-06-202023-06-202005-110734-210110.1116/1.2056554https://hdl.handle.net/20.500.14352/51114© 2005 American Vacuum Society. The authors acknowledge C.A.I. de Implantación Iónica (U.C.M.) for technical support, C.A.I. de espectroscopía for FTIR measurements and C.A.I. de difracción de rayos X for x-ray characterization. This work was partially supported by the Spanish M.E.C., under Contract Nos. T.I.C. 01-1253 and TEC 2004-1237/MIC.We present a study of the physical properties of TiO2 thin films deposited at 200 degrees C on Si by high pressure reactive sputtering, a nonconventional deposition method. Just after deposition, the TiO2 films were in situ annealed in the deposition chamber at temperatures between 600 and 900 degrees C in O-2 atmosphere. Morphological, compositional, structural and electrical characterization of the samples was performed by means of several techniques, including transmission electron microscopy, heavy-ion elastic recoil detection analysis, infrared spectroscopy, x-ray and electron diffraction and capacitance-voltage measurements. Microscopy images show that the TiO2 films are polycrystalline, and that a SiO2 film spontaneously grows at the TiO2/Si interface. The unannealed TiO2 films are oxygen rich, as shown by compositional measurements. By annealing this oxygen excess is released. For temperatures above 600 degrees C the TiO2 films are stoichiometric. Infrared spectroscopy and diffraction measurements show that as-deposited films are a mixture of anatase and rutile grains. During annealing there is a phase transformation, and at 900 degrees C the anatase phase disappears and only the rutile phase is found. The relative dielectric permittivity of the TiO2 film is calculated from capacitance-voltage measurements, and very high. values in the 88-102 range are obtained.journal articlehttp://dx.doi.org/10.1116/1.2056554http://scitation.aip.orgmetadata only access537Thin-FilmsTransport-PropertiesOptical-PropertiesInterfacial LayerGate InsulatorsHe+ IrradiationSiliconPlasmaTitaniumDeposition.ElectricidadElectrónica (Física)2202.03 Electricidad