Olea Ariza, JavierGonzález Díaz, GermánPastor Pastor, DavidGarcía Hemme, EricCaudevilla Gutiérrez, DanielAlgaidy, SariPérez Zenteno, Francisco JoséDuarte Cano, SebastiánGarcía Hernansanz, RodrigoPrado Millán, Álvaro DelSan Andrés Serrano, EnriqueMartil De La Plaza, IgnacioLee, Yao-JenHong, Tzu-ChiehChao, Tien-Sheng2023-11-172023-11-172023J. Olea, G. González-Díaz, D. Pastor, E. García-Hemme, D. Caudevilla, S. Algaidy, F. Pérez-Zenteno, S. Duarte-Cano, R. García-Hernansanz, A. Del Prado, E. S. Andrés, I. Mártil, Y.-J. Lee, T.-C. Hong, and T.-S. Chao, Semicond. Sci. Technol. 38, 024004 (2023).0268-124210.1088/1361-6641/acac4ahttps://hdl.handle.net/20.500.14352/88805Microwave annealing (MWA) processes were used for the first time to obtain Ti supersaturated Si. High Ti doses were ion implanted on Si substrates and subsequently MWA processed to recrystallize the amorphous layer. The resulting layers were monocrystalline with a high density of defects. Ti depth profiles indicate that diffusion is avoided once recrystallization is produced. Finally, the electronic transport properties measurements point to a decoupling effect between the Si:Ti layer and the substrate. The implanted layer present also a shallow donor and very high Hall mobility.engAttribution-NonCommercial-NoDerivatives 4.0 Internationalhttp://creativecommons.org/licenses/by-nc-nd/4.0/journal article1361-6641http://dx.doi.org/10.1088/1361-6641/acac4ahttps://iopscience.iop.org/article/10.1088/1361-6641/acac4a/metaopen access538.9SupersaturatedMicrowaveSiliconTitaniumInfraredMicroelectronicsImplantationFísica del estado sólido2211 Física del Estado Sólido