Bellani, V.Parravicini, G. B.Díez Alcántara, EduardoDomínguez-Adame Acosta, FranciscoHey, R.2023-06-202023-06-202002-11-151098-012110.1103/PhysRevB.66.193310https://hdl.handle.net/20.500.14352/59349© 2002 The American Physical Society. We thank L. C. Andreani and B. Méndez for the careful reading of the manuscript and G. Guizzetti for enlightening discussions. V.B. was partially supported by MURST (Project ‘Giovani Ricercato’). Work at Madrid was supported by DGI-MCyT (Project No. MAT2000-0734) and CAM (Project No. 07N/0075/20019.We studied the optical properties of ordered and intentionally disordered GaAs-AlxGa1-xAs superlattices, with and without dimer-type correlations in the disorder, by means of spectroscopic ellipsometry. The electronic structure of the superlattices has been calculated and compared with the experiments. The optical transitions in ordered, correlated, and uncorrelated disordered superlattices show specific features that we relate to their different electronic structures.engEllipsometric characterization of random and random-dimer GaAs-Alx-Ga_(1-x)As superlatticesjournal articlehttp://dx.doi.org/10.1103/PhysRevB.66.193310http://journals.aps.orgopen access538.9Interband-TransitionsLocalizationAbsenceFísica de materiales