González Díaz, GermánMartín, J.M.Artús, L.Cuscó, R.Ibañez, J.2023-06-202023-06-201997-10-150021-897910.1063/1.365753https://hdl.handle.net/20.500.14352/59345© American Institute of Physics. The authors gratefully acknowledge the Spanish Ministerio de Educación y Ciencia for financial support.We have studied the lattice recovery by rapid thermal annealing of Si+-implanted InP using Raman spectroscopy. The crystallinity recovery for different annealing temperatures of samples totally amorphized by the implantation can be monitored by means of their Raman spectra. However, free-charge coupling with the LO mode and possible misorientation of the recrystallized material may alter substantially the first-order Raman spectrum, making it unreliable for a good characterization of the lattice recovery. The study of second-order Raman spectrum overcomes the problems present in the analysis of first-order Raman spectrum and provides suitable criteria to assess the recrystallization of the implanted and annealed samples. After rapid thermal annealing at 875 degrees C for 10 s, the intensity of the second-order peaks approaches 70% of its value in virgin InP, and third-order Raman peaks are also clearly detected, evidencing the good lattice recovery achieved.engjournal articlehttp://dx.doi.org/10.1063/1.365753http://scitation.aip.org/open access537Ion-ImplantationGaAsDamageSilicon.ElectricidadElectrónica (Física)2202.03 Electricidad