Clemente Barreira, Juan AntonioHubert, GuilaumeFraire, JuanFranco Peláez, Francisco JavierVilla, FrancescaRey, SolenneBaylac, MaudPuchner, HelmutMecha, HortensiaVelazco, Raoul2023-06-172023-06-172018-02-010018-949910.1109/TNS.2018.2800905https://hdl.handle.net/20.500.14352/11974“© © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.”This paper presents a SEU sensitivity characterization at ultra-low bias voltage of three generations of COTS SRAMs manufactured in 130 nm, 90 nm and 65 nm CMOS processes. For this purpose, radiation tests with 14.2 MeV neutrons were performed for SRAM power supplies ranging from 0.5 V to 3.15 V. The experimental results yielded clear evidences of the SEU sensitivity increase at very low bias voltages. These results have been cross-checked with predictions issued from the modeling tool MUlti-SCAles Single Event Phenomena Predictive Platform (MUSCA-SEP3). Large-scale SELs and SEFIs, observed in the 90-nm and 130-nm SRAMs respectively, are also presented and discussed.spajournal articlehttp://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=23open accessCOTSSRAMneutron testsradiation hard- nessreliabilitysoft errorlow-bias voltageFísica nuclearCircuitos integradosHardwareElectrónica (Informática)2207 Física Atómica y Nuclear2203.07 Circuitos Integrados2203 Electrónica