Méndez Martín, María BianchiPiqueras De Noriega, Francisco JavierCavallini, A.Fraboni, B.2023-06-202023-06-201994-050921-510710.1016/0921-5107(94)90315-8https://hdl.handle.net/20.500.14352/58969© Elsevier Science SA Lausanne. International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 93) - A NATO Advanced Research Workshop (3. 1993. Bolonia, Italia)Evidence for IR cathodoluminescence (CL) at 1.2 and 1.0 eV in Te-doped GaAs in the temperature range 80-300 K has been obtained. The evolution of CL intensity and half-width of emission bands after silicon implantation and annealing has been investigated. The increase in the CL intensity with implantation dose after heat treatment supports the association of Si and/or Te with the radiation-induced Ga vacancies to form Si(Ga) or Te(Ga) defects.journal articlehttp://dx.doi.org/10.1016/0921-5107(94)90315-8http://www.sciencedirect.commetadata only access538.9Materials ScienceMultidisciplinaryPhysicsCondensed MatterFísica de materiales