Zaldivar, M.H.Fernández Sánchez, PalomaPiqueras De Noriega, Francisco Javier2023-06-202023-06-201998-03-010021-897910.1063/1.366634https://hdl.handle.net/20.500.14352/59145© 1998 American Institute of Physics. This work was supported by DGICYT (Project PB-1256). M.H.Z. thans AECI and CoNaCyt for a research grant.Cathodoluminescence (CL) in the scanning electron microscope has been used to study cross-sectional samples on GaN epitaxial films grown on sapphire. Increased CL emission, attributed to the presence of stacking faults and decorated dislocations, is observed in a region of the buffer layer close to the film-substrate interface, In the epilayers also a region of enhanced emission is observed which is partially caused by Si doping and in which structural defects are involved. Cross-sectional CL appears as a useful method to reveal features of the spatial distribution of luminescence, not detectable by plan-view measurements.engjournal articlehttp://dx.doi.org/10.1063/1.366634http://scitation.aip.org/restricted access538.9Física de materiales