López, IñakiNogales Díaz, EmilioHidalgo Alcalde, PedroMéndez Martín, María BianchiPiqueras De Noriega, Francisco Javier2023-06-202023-06-202012-011862-630010.1002/pssa.201127406https://hdl.handle.net/20.500.14352/44078© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This work has been supported by MICINN (Projects MAT 2009-07882 and Consolider Ingenio CSD 2009-00013) and by BSCH-UCM (Project GR35-10A-910146). The authors are grateful to Dr Luca Gregoratti at the Sincrotrone Trieste for useful advises on XPS measurements.The field emission properties of gallium oxide nanowires grown by thermal evaporation-deposition have been investigated inside the chamber of a scanning electron microscope. Turn on electric fields and enhancement factors have been determined for Sn doped nanowires. X-ray photoelectron spectroscopy measurements have been performed to calculate the work function of Sn doped Ga2O3. The results show improved field emission properties of Sn doped Ga2O3 nanowires, with a lower threshold field (below 1.0 V/mu m). The obtained values are competitive with those achieved in other nanostructured materials, including carbon nanotubes.engjournal articlehttp://onlinelibrary.wiley.com/doi/10.1002/pssa.201127406/fullhttp://onlinelibrary.wiley.comopen access538.9Ga2o3 NanowiresThin-FilmsBeta-Ga2o3GrowthFísica de materiales