Dutta, P. S.Méndez Martín, María BianchiPiqueras De Noriega, Francisco JavierDieguez, E.Bhat, H. L.2023-06-202023-06-201996-07-150021-897910.1063/1.362848https://hdl.handle.net/20.500.14352/58962© 1996 American Institute of Physics. P.S.D. thanks CSIR (India) for the award of the Senior Research Fellowship. This work was partially supported by the Instituto Nicolas Cabrera, UAM, Madrid, Spain, through a visiting scientist fellowship and by the DGICYT (Project No. PB93-1256), CICYT (IN 93-0012), and ESP-95-0148.Diffusion of tellurium In undoped p-GaSb has been carried out. Using the cathodoluminescence and photoluminescence techniques, the luminescence centers in Te-diffused samples have been identified and compared with the Te-doped bulk GaSb. Fundamental differences in the radiative levels are observed between the diffused and the as-grown doped samples. Evidence for self-compensating acceptor complexes are seen in diffused samples. With short and moderate diffusion times, a compensating acceptor complex VGaGaSbTeSb is observed. For long diffusion times, the dominant acceptor center has been attributed to the antisite defect Ga-Sb or related complex. The reasons for the formation of various acceptor centers have been discussed.engjournal articlehttp://dx.doi.org/10.1063/1.362848http://scitation.aip.orgopen access538.9Gallium AntimonidePhotoluminescenceEpitaxyFísica de materiales