González Díaz, GermánArtús, L.Blanco, N.Cuscó, R.Ibáñez, J.Long, A.R.Rahman, M.2023-06-202023-06-202000-12-010021-897910.1063/1.1322593https://hdl.handle.net/20.500.14352/59343© American Institute of Physics. The authors wish to acknowledge financial support from the Spanish Ministry of Science and Technology.We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard-Mermin model used to fit the Raman spectra and in the Shubnikov-de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard-Mermin model.engjournal articlehttp://dx.doi.org/10.1063/1.1322593http://scitation.aip.orgopen access537P-Type GaAsCarrier ConcentrationPlasmon ModesPhonon ModesInPSpectra.ElectricidadElectrónica (Física)2202.03 Electricidad