Vincent, J.Díaz-Guerra Viejo, CarlosPiqueras de Noriega, JavierAmariei, A.Polychronladis, E.K.Dieguez, E.2023-06-202023-06-202006-03-15[1] L. Reijnen, R. Brunton, I.R. Grant, J. Crystal Growth 275 (2005) e595. [2] A. Mitric, J. Vincent, R. Caillard, V. Bermúdez, E. Diéguez, T. Duffar, AIP Conf. Proc. 738 (2004) 377. [3] J. Vincent, V. Bermuúdez, E. Diéguez, L.C. Alves, V. Corregidor, N.P. Barradas, J. Crystal Growth 275 (2005) e537. [4] P.S. Dutta, H.L. Bhat, V. Kumar, J. Appl. Phys. 81 (1997) 5821. [5] J. Vincent, D. Martín, V. Bermúdez, C. Algora, E. Diéguez, AIP Conf. Proc. 738 (2004) 368. [6] S. Iyer, L. Small, S.M. Hedge, K.K. Bajaj, A. Abdul-Fadl, J. Appl. Phys. 77 (1995) 5902. [7] M.C. Wu, C.C. Chen, J. Appl. Phys. 72 (1992) 4275. [8] P.S. Dutta, B. Méndez, J. Piqueras, E. Diéguez, H.L. Bhat, J. Appl. Phys. 80 (1996) 1112. [9] G. Benz, R. Conradt, Phys. Rev. B 16 (1977) 843. [10] B. Méndez, J. Piqueras, P.S. Dutta, E. Diéguez, Mater. Sci. Eng. B 42 (1996) 38. [11] A.S. Filipchenko, L.P. Bolshakov, A. Naurizbaev, A.G. Braginskaya, A.N. Popov, Phys. Stat. Solidi (A) 48 (1978) K115. [12] P. Gladkov, E. Monova, J. Weber, Semicond. Sci. Technol. 12 (1997) 1409. [13] J. Vincent, unpublished results. [14] D.J.T. Hurle, P. Rudolph, J. Crystal Growth 264 (2004) 550. [15] D. Li, D.M. Herlach, Phys. Rev. Lett. 77 (1996) 1801. [16] K. Sangwal, Elementary Crystal Growth, SAAN Publishers, 1994, p. 135 (Chapter 4).0022-024810.1016/j.jcrysgro.2005.10.126https://hdl.handle.net/20.500.14352/51164© 2005 Elsevier B.V. This work has been carried out in the frame of the Fifth Framework European Programme for research, HPRNCT 2001-00199 project. Support from MCYT through project MAT2003-00455 is also acknowledged.Undoped and Te-doped GaSb ingots have been grown by the vertical feeding method. The structural, optical and electrical properties of the grown crystals were respectively investigated by X-ray diffraction, transmission electron microscopy, cathodoluminescence spectroscopy and Hall effect measurements. Undoped samples show good crystalline and electrical properties. Te-doped material presents a clear polycrystalline character and a deviation from axial segregation laws found for crystals grown by classical techniques. The obtained results allow us to draw some conclusions about the solidification mechanism associated to the growth conditions used in our feeding experiments.engjournal articlehttp://dx.doi.org/10.1016/j.jcrysgro.2005.10.126http://www.sciencedirect.comrestricted access538.9Liquid-Phase EpitaxyGallium AntimonidePhotoluminescenceMeltsFísica de materiales