Rezgui, B. DridGourbilleau, F.Maestre Varea, DavidPalais, O.Sibai, A.Lemiti, M.Bremond, G.2023-06-202023-06-202012-07-150021-897910.1063/1.4737579https://hdl.handle.net/20.500.14352/42745© 2012 American Institute of Physics This work was supported by the French National Agency for Research (ANR) through the DUOSIL project. Financial support has also been partly funded by the RhôneAlpes region in the frame of the PHOSIL project.Experimental investigation of photoconductivity in Si-rich silicon oxide (SRSO)/SiO_2 multilayer (ML) structures prepared by magnetron reactive sputtering is reported. Photocurrent (PC) measurements show that the PC threshold increases with decreasing the thickness of SRSO layer. Photo-conduction processes in our samples are shown to be dominated by carrier transport through quantum-confined silicon nanocrystals embedded in the SiO_2 host. In addition, the observed bias-dependence of photocurrent intensity is consistent with a model in which carrier transport occurs by both tunneling and hopping through defect states in the silicon oxide matrix. A photocurrent density J_(ph) of 1-2mA cm^(-2) is extracted from our results. Although this photocurrent density along the ML absorber film is relatively low, the results presented in this work are believed to be a valuable contribution toward the implementation of all-Si tandem solar cells.engjournal articlehttp://dx.doi.org/10.1063/1.4737579http://aip.scitation.orgopen access538.9Pulsed-laser depositionSolar-cell applicationsSi nanocrystalsQuantum dotsPhotoluminescenceNanostructuresTemperatureGapFísica de materialesFísica del estado sólido2211 Física del Estado Sólido