Martil De La Plaza, IgnacioGonzález Díaz, GermánPrado Millán, Álvaro DelSan Andrés Serrano, Enrique2023-06-202023-06-202004-040168-583X10.1016/j.nimb.2003.11.003https://hdl.handle.net/20.500.14352/51121© 2003 Elsevier B.V. All rights reserved. This study was supported in part by the German Bundesministerium für Wirtschaft (contract 0329773) and by the CICYT of Spain (contract TIC 01-1253).The composition of silicon oxynitride (SiOxNy:H) films deposited by electron cyclotron resonance chemical vapour deposition (ECR-CVD) was analysed by ion beam techniques, heavy-ion elastic recoil detection analysis (HI-ERDA) with 150 MeV Kr-86 ions and Rutherford backscattering spectroscopy (RBS) with 1.4 MeV He-4 ions. The results were compared with energy dispersive X-ray analysis (EDX) and Auger electron spectroscopy (AES). Since HI-ERDA provides absolute atomic concentrations of all film components including hydrogen with a sensitivity of at least 0.005 at% the data from this method were used as a quantitative reference to assess the applicability of RBS, EDX and AES to the analysis of silicon oxynitrides. For each of these techniques the comparison with HI-ERDA allowed a discussion of the different sources of error, especially of those causing systematic deviations of the measured concentration values. A novel approach to determine from RBS spectra also the hydrogen concentrations appeared to be applicable for hydrogen levels exceeding 2 at%. Furthermore, it is shown that the film density can be determined from the HI-ERDA results alone or in combination with single-wavelength ellipsometry.engjournal articlehttp://dx.doi.org/10.1016/j.nimb.2003.11.003http://www.sciencedirect.comopen access537Electron-Cyclotron-ResonanceSilicon Oxynitride FilmsChemical-Vapor-Deposition.ElectricidadElectrónica (Física)2202.03 Electricidad