Franco Peláez, Francisco JavierZong, YiAgapito Serrano, Juan AndrésCasas-Cubillos, JuanRodríguez-Ruiz, Miguel Ángel2023-06-202023-06-202004-07-220-7803-8697-310.1109/REDW.2004.1352912https://hdl.handle.net/20.500.14352/53407© IEEE IEEE Radiation Effects Data Workshop (2004, Atlanta). This work was supported by the cooperation agreement K476/LHC between CERN and UCM, by the Spanish Research Agency CICYT (FPA2002-00912) and partially supported by ITN.Radiation tests on CMOS analog switches were carried out in order to select the most tolerant device for future use in the cryogenic system of the CERN large hadron collider. After irradiation, the devices showed some interesting changes related to the power supplies: an increase in the lowest supply voltage capable of biasing correctly the devices; some devices cannot work with TTL logic levels. In addition, hysteresis phenomena appear.engbook parthttp://dx.doi.org/10.1109/REDW.2004.1352912open access537.8CMOS analogue integrated circuitsField effect transistor switchesGamma-ray effectsHysteresisNeutron effectsLHCTID testsTTL logic levelsDevice biasing voltageHysteresis phenomenaIrradiated analog CMOS switchesLarge hadron colliderLowest supply voltage phenomenaNeutron fluenceRadiation testsSwitching threshold voltage shiftTotal gamma doseTotal ionizing doseCMOS logic circuitsCryogenicsLarge Hadron ColliderLogic devicesNeutronsPulse invertersSwitchesSystem testingVoltageElectrónica (Física)Radiactividad