Prieto, PilarMarco, F.Prieto, José E.Ruiz Gómez, SandraPérez García, LucasPerez del Real, RafaelVelazquez, ManuelDe laFiguera, Juan2023-06-172023-06-172018-04-01978-1-62841-817-00169-433210.1016/j.apsusc.2017.12.111https://hdl.handle.net/20.500.14352/11953©2017 Elsevier B.V. All rights reserved. This work was supported by the Spanish Ministry of Economy under the project number MAT2015-64110-CO2.Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe₂, or ceramic, CoFe₂2O₄, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe₂O₄ [100]/TiN [100]/Si [100]. Mossbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in- plane anisotropy depends on the lattice mismatch between CoFe₂O₂ and TiN, which is larger for CoFe₂O₄ thin films grown on the reactive sputtering process with ceramic targets.engAtribución-NoComercial-SinDerivadas 3.0 Españahttps://creativecommons.org/licenses/by-nc-nd/3.0/es/journal articlehttp://dx.doi.org/10.1016/j.apsusc.2017.12.111https://www.sciencedirect.comopen access538.9Cobalt ferriteEpitaxial thin filmsSilicon device integratioMagnetic anisotropy.Física de materialesFísica del estado sólido2211 Física del Estado Sólido