Cavallini, A.Dupasquier, A.Ferro, G.Piqueras De Noriega, Francisco JavierValli, M.2023-06-202023-06-2019970-87849-779-X255-257.614https://hdl.handle.net/20.500.14352/60855© Trans Tech Publications Ltd. International Conference on Positron Annihilation (ICPA-11) (11. 1997. Kansas City, Missouri, USA).The radial vacancy distribution along a LEC-GaAs:Te wafer with an average free carrier concentration n = 1.5 x 10(18) cm(-3) was studied by means of positron lifetime spectroscopy. An M-shaped radial distribution of vacancy-like defects, most probably Te(As)V(Ga)(-), was observed.book parthttp://dx.doi.org/10.4028/www.scientific.net/MSF.255-257.614http://www.scientific.net/metadata only access538.9As-Grown GaasDoped GaasSpectroscopyFísica de materiales