González Herrera, Elvira MaríaLin, Y.Mendez, E. E.2023-06-202023-06-202001-01-151098-012110.1103/physrevb.63.033308https://hdl.handle.net/20.500.14352/60177©2000 The American Physical Society. We thank Dr. A. Sacedon for her participation in the early stages of this work, Dr. W. I. Wang for contributing the heterostructures used in it, and Dr. Aleiner for useful discussions. The support of the US Army Research Office and of NATO (E.M.G.) have made this work possible.We have measured the zero-bias differential tunneling conductance of InAs/AlSb/GaSb/AlSb/InAs heterostructures at law temperatures (1.7 K<T<60 K) and under a magnetic field at various angles with the heterostructure's interfaces. Shubnikov-de Haas oscillations in the magnetoconductance reveal the two- dimensional (2D) character of the electrons accumulated at the InAs interfaces and yield their number in each of them. The temperature dependence of the oscillations suggests the formation of a field-induced energy gap at the Fermi level, similar to that observed before in simpler 2D-2D tunneling systems. A calculation of the magnetoconductance that considers different 2D densities in the two InAs electrodes agrees with the main observations, but fails to explain features that might be related to the presence of 2D holes in the GaSb region.engjournal articlehttp://dx.doi.org/10.1103/physrevb.63.033308https://journals.aps.orgopen access538.9High magnetic-fieldsInterbandHeterostructuresBarrierDiodesGasesFísica de materialesFísica del estado sólido2211 Física del Estado Sólido