Sefrioui Khamali, ZouhairSefrioui Khamali, ZouhairRivera Calzada, Alberto CarlosLeón Yebra, CarlosCuéllar Jiménez, Fabian AndrésSantamaría Sánchez-Barriga, JacoboBarthélémy, Agnès2024-02-072024-02-072010Sefrioui, Z., et al. «All‐Manganite Tunnel Junctions with Interface‐Induced Barrier Magnetism». Advanced Materials, vol. 22, n.o 44, noviembre de 2010, pp. 5029-34. DOI.org (Crossref), https://doi.org/10.1002/adma.201002067.0935-964810.1002/adma.201002067https://hdl.handle.net/20.500.14352/99773Artículo firmado por 18 autoresIn epitaxial heterostructures combining strongly correlated manganese oxides with antiferromagnetic-insulator or half-metallic character, a large interfacial moment is found and used to produce a spin-filter-like behavior in all-manganite tunnel junctions. The results suggest that after playing a key role in exchange-bias for spin-valves, uncompensated moments at engineered antiferromagnetic interfaces represent a novel route for generating highly spin-polarized currents with antiferromagnets.engjournal article1521-4095https://doi.org/10.1002/adma.201002067restricted access538.95Física del estado sólidoFísica de materiales2211.14 Interfases2211.17 Propiedades Magnéticas