Piqueras De Noriega, Francisco JavierMéndez Martín, María BianchiPlugaru, R.Craciun, G.García, J. A.Remon, A.2023-06-202023-06-201999-030947-839610.1007/s003390050897https://hdl.handle.net/20.500.14352/58945© Springer. This work was supported by NATO (Grant HTECH. CRG 961392) and DGES (Project PB96-0639).Luminescence emission of nanocrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As-deposited films show a dominant band at 400 nm as well as a band centered at about 650 nm. CL spectra of porous silicon samples also show emission at 400 nm. Spectral changes induced by annealing and implantation treatments of the films suggest that the presence of nanocrystals is the origin of the observed CL.engjournal articlehttp://link.springer.com/article/10.1007%2Fs003390050897?LI=true#http://link.springer.comopen access538.9Luminescence PropertiesPhotoluminescenceEmissionSiFísica de materiales