Méndez Martín, María BianchiPiqueras De Noriega, Francisco Javier2023-06-202023-06-201991-03-010021-897910.1063/1.348636https://hdl.handle.net/20.500.14352/58998© 1991 American institute of Physics. This work was supported by the Comision Interministerial de Ciencia y Tecnologia (Project PB86-015 1) and by DGlCYT-DAAD. The authors thank Wacker-Chemitronic (Dr. K. Liihnert) for providing the samplesCathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL-contrast changes as a function of doping level have been found. Profiles of infrared CL intensity across the wafers show an inverted U shape.engjournal articlehttp://dx.doi.org/10.1063/1.348636http://scitation.aip.orgopen access538.9Spatial-DistributionFísica de materiales