Pampillón, María Ángela.Feijoo, Pedro CarlosSan Andrés Serrano, EnriqueToledano-Luque, MaríaPrado Millán, Álvaro DelBlázquez, Antonio J.Lucía Mulas, María Luisa2024-02-052024-02-052011Pampillón, M. A., et al. «Towards Metal Electrode Interface Scavenging of Rare-Earth Scandates: A Sc2O3 and Gd2O3 Study». Microelectronic Engineering, vol. 88, n.o 7, julio de 2011, pp. 1357-60. DOI.org (Crossref), https://doi.org/10.1016/j.mee.2011.03.025.0167-931710.1016/j.mee.2011.03.025https://hdl.handle.net/20.500.14352/99177Amorphous Gd2O3 and Sc2O3 thin films were deposited on Si by high-pressure sputtering (HPS). In order to reduce the uncontrolled interfacial SiOx growth, firstly a metallic film of Gd or Sc was sputtered in pure Ar plasma. Subsequently, they were in situ plasma oxidized in an Ar/O2 atmosphere. For post-processing interfacial SiOx thickness reduction, three different top metal electrodes were studied: platinum, aluminum and titanium. For both dielectrics, it was found that Pt did not react with the films, while Al reacted with them forming an aluminate-like interface and, finally, Ti was effective in scavenging the SiO2 interface thickness without severely compromising gate dielectric leakage.engjournal articlehttps://doi.org/10.1016/j.mee.2011.03.025open access537High-kGadolinium oxideScandium oxideScavengingElectrónica (Física)2203 Electrónica