Martil De La Plaza, IgnacioGonzález Díaz, GermánPrado Millán, Álvaro DelSan Andrés Serrano, Enrique2023-06-202023-06-202004-010021-492210.1143/JJAP.43.66https://hdl.handle.net/20.500.14352/51126© 2004 The Japan Society of Applied Physics. The authors would like to thank C.A.I. de Implantación Iònica from Complutense University in Madrid for technical assistance with the ECR-PECVD system. This research was partially supported by the Spanish DGESIC under grant nos. TIC 1FD97-2085 and TIC 01/1253.An interface quality comparative study of metal-insulator-semiconductor (MIS) structures based on SiNx, SiO2/SiNx and SiO(x)Ny dielectric films deposited on silicon substrates by electron-cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) has been carried out. Overall interpretation of deep-level transient spectroscopy (DLTS) and conductance transient (G-t) measurements enables us to conclude that the interface quality of Al/SiOxNy/Si MIS structures is superior to those of Al/SiNx/Si devices. Moreover,. we have proved that thermal treatments applied to Al/SiOxNy/Si capacitors induce defect passivation, possibly related to the presence of hydrogen in the films, and disorder-induced gap-state (DIGS) density maxima can decrease to values even lower than those corresponding to Al/SiNx/SiO2/Si devices.engjournal articlehttp://dx.doi.org/10.1143/JJAP.43.66http://iopscience.iop.orgopen access537Insulator-Semiconductor StructuresInduced Gap StatesC-V CurvesQualityOxideOxynitrideDevices.ElectricidadElectrónica (Física)2202.03 Electricidad