Alemán, B.Hidalgo Alcalde, PedroFernández Sánchez, PalomaPiqueras De Noriega, Francisco Javier2023-06-202023-06-202009-11-210022-372710.1088/0022-3727/42/22/225101https://hdl.handle.net/20.500.14352/44201© 2009 IOP Publishing Ltd. This work was supported by MEC (Project MAT2006-01259).Bi doped ZnO nanowires and rods have been grown by a catalyst free evaporation-deposition method with precursors containing either ZnO and Bi_2O_3 or ZnS and Bi_2O_3 powders. The use of ZnS as a precursor was found to lead to a higher density of nano- and microstructures at lower temperatures than by using ZnO. Energy dispersive x-ray spectroscopy (EDS) shows that the Bi content in the wires and rods is in the range 0.15-0.35 at%. Bi incorporation was found to induce a red shift of the near band gap luminescence but no quantitative correlation between the shift and the amount of Bi, as measured by EDS, was observed. The I-V curves of single Bi doped wires had linear behaviour at low current and non-linear behaviour for high currents, qualitatively similar to that of undoped wires.engjournal articlehttp://dx.doi.org/10.1088/0022-3727/42/22/225101http://iopscience.iop.orgrestricted access538.9Zinc-Oxide CeramicsSpray-PyrolysisLuminescenceNanostructuresFabricationDepositionDefectsGreenFísica de materiales