Feijoo, Pedro CarlosKauerauf, ThomasToledano-Luque, MaríaTogo, MisuhiroSan Andrés Serrano, EnriqueGroeseneken, Guido.2024-11-142024-02-022024-11-142012-01-061530-4388https://hdl.handle.net/20.500.14352/98211.2Está depositada la versión preprint del artículoIn this paper, the time-dependent dielectric breakdown (TDDB) in sub-1-nm equivalent oxide thickness (EOT) n-type bulk FinFETs is studied. The gate stacks consist of an IMEC clean interfacial layer, atomic layer deposition HfO2 high-kappa and TiN metal electrode. For the 0.8-nm EOT FinFETs, it is found that TDDB lifetime is consistent with results of planar devices for areas around 10(-8) cm(2), implying that the FinFET architecture does not seem to introduce new failure mechanisms. However, for devices with smaller area, the extrapolated voltage at a ten-year lifetime for soft breakdown (SBD) does not meet the specifications, and as a consequence, the SBD path wear-out will have to be included in the final extrapolation. Furthermore, it is shown that for EOTs smaller than 0.8 nm, the TDDB reliability on n-type FinFETs is challenged by the high leakage currents.engjournal article1558-2574https://doi.org/10.1109/TDMR.2011.2180387open access621.38FinFETHigh-kappaReliabilityScavengingTime-dependent dielectric breakdown (TDDB)Electrónica (Física)2203 Electrónica