Bruno, Flavio YairGarcia Barriocanal, JavierTorija, M.Rivera Calzada, Alberto CarlosSefrioui, ZouhairLeighton, C.León Yebra, CarlosSantamaría Sánchez-Barriga, Jacobo2023-06-202023-06-202008-02-250003-695110.1063/1.2887905https://hdl.handle.net/20.500.14352/51411© 2008 American Institute of Physics. The work at UCM was supported by MEC MAT 2005—06024 C02 and work at UMN was supported by NSF DMR.Electrical transport properties of heteroepitaxial p-n junctions made of La_(0.8)Sr_(0.2)CoO_(3) and SrTi_(0.99)Nb_(0.01)O_(3) were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20–300 K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130 K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interface.engjournal articlehttp://dx.doi.org/10.1063/1.2887905http://scitation.aip.org/open access537PhysicsApplied.ElectricidadElectrónica (Física)2202.03 Electricidad