Miranda Pantoja, José MiguelSebastián Franco, José Luis2023-06-202023-06-201999-090268-124210.1088/0268-1242/14/9/310https://hdl.handle.net/20.500.14352/58951© 1999 IOP Publishing Ltd. This work has been funded by the European Community through programme TMR (project ERBFMRXCT960050). The authors wish to thank Dr Tomás González from the University of Salamanca for his helpful comments.This paper presents a procedure to improve the algorithm of Sangiorgi, Ricco and Venturi for the calculation of the time of flight in Monte Carlo simulations. The method is used to efficiently optimize the step function in which the total scattering probability is discretized. The optimization criterion suggested in this work can reduce the self-scattering events to less than 30% in a fairly wide range of temperatures, applied fields and doping levels. Different examples are presented to illustrate the advantages of the method.engInfluence of the minimization of self-scattering events on the Monte Carlo simulation of carrier transport in III-V semiconductorsjournal articlehttp://dx.doi.org/10.1088/0268-1242/14/9/310http://iopscience.iop.orgrestricted access537Technologically Significant SemiconductorsSchotiky-Barrier DiodesZincblende StructuresNoiseDiamondSpectraDevices.ElectricidadElectrónica (Física)2202.03 Electricidad