Martil De La Plaza, IgnacioGonzález Díaz, GermánBarbolla, J.Castán, E.Dueñas, S.Peláez, R.Pinacho, R.Quintanilla, L.2023-06-202023-06-201997-08-110003-695110.1063/1.119658https://hdl.handle.net/20.500.14352/59302© American Institute of Physics.Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients varies with the frequency at which they are obtained. This behavior is explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model. (C) 1997 American Institute of Physics.engjournal articlehttp://dx.doi.org/10.1063/1.119658http://scitation.aip.orgopen access537Silicon-NitrideSpectroscopy.ElectricidadElectrónica (Física)2202.03 Electricidad