Hidalgo Alcalde, PedroMéndez Martín, María BianchiPiqueras De Noriega, Francisco JavierDutta, P. S.2023-06-202023-06-2019981-55899-416-5https://hdl.handle.net/20.500.14352/60818© Materials Research Society. Symposium on Defect and Impurity Engineered Semiconductors II at the Materials-Research-Society Spring Meeting (1998. San Francisco, California).Cathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the effect of doping with an isoelectronic dopant, aluminum, on the native accepters and on the general structure of extended defects of gallium antimonide single crystals. While there is no significant change in the native defect content, decoration of non-radiative recombination centers or extended defects occurs as a result of aluminum doping.book parthttp://dx.doi.org/10.1557/PROC-510-639http://journals.cambridge.orgmetadata only access538.9EngineeringElectrical & ElectronicMaterials ScienceMultidisciplinaryCoatings & FilmsFísica de materiales