Khaouani, MohammedSessa, AndreaDe Stefano, SebastianoRouigueb, HichemBelbachir, Mohammed AnesMazzotti, AdolfoPelella, AnielloDurante, OfeliaDi Bartolomeo, AntonioGarcía Hemme, Eric2026-05-182026-05-182026-05Khaouani, Mohammed, et al. «Experiment and Simulation in Silicon PN-Junction Photodetectors: Insights into Electrical and Optical Transport». Physica B: Condensed Matter, vol. 730, mayo de 2026, p. 418479. DOI.org (Crossref), https://doi.org/10.1016/j.physb.2026.418479.0921-452610.1016/j.physb.2026.418479https://hdl.handle.net/20.500.14352/136750© 2026 The Authors.Silicon PN junctions remain central to optoelectronic technologies due to their maturity and CMOS compatibility. We report the fabrication and comprehensive optoelectronic characterization of a silicon PN-junction photodiode demonstrating stable operation over a wide temperature range. The device exhibits excellent diode behavior, with a rectification ratio exceeding four orders of magnitude, an ideality factor close to unity above 0.3 V, and a series resistance below 100 Ω. Under white-light illumination, the photodiode shows a linear photocurrent response over broad optical power and temperature ranges, achieving an average responsivity of 0.3 A W−1. We implement a machine learning framework based on an Artificial Neural Network to perform global parameter estimation, demonstrating its effectiveness in generalizing across diverse experimental datasets. Moreover, we propose a comprehensive analytical model, validated by Atlas–Silvaco simulations, that successfully captures charge transport and photogeneration mechanisms. This integrated approach, combining experimental measurements, machine learning, numerical simulations and analytical modelling, provides a robust performance benchmark and deeper insights for optimizing silicon-based optoelectronic devices.engAttribution 4.0 Internationalhttp://creativecommons.org/licenses/by/4.0/journal article1873-2135https://dx.doi.org/10.1016/j.physb.2026.418479https://www.sciencedirect.com/science/article/pii/S0921452626002371open access621.38621.383.5AbstractIdeality factorHigh-efficiencyRecombinationPhotodiodeVoltageElectrónica (Física)Optoelectrónica2203 Electrónica3307.09 Dispositivos Fotoeléctricos