Díaz-Guerra Viejo, CarlosChioncel, M. F.Vincent, JPiqueras De Noriega, Francisco JavierBermudez, V.Diéguez, E.2023-06-202023-06-2020051610-163410.1002/pssc.200460522https://hdl.handle.net/20.500.14352/51138© Wiley-V C H Verlag GmbH. International Conference on Extended Defects in Semiconductors (10. 2004. Chernogolovka, Rusia).The homogeneity and luminescence properties of undoped and Te-doped In_xGa_(1-x)Sb crystals grown by the Bridgman and Vertical Feeding methods have been studied by cathodoluminescence (CL) and X-ray microanalysis in a scanning electron microscope. CL micrographs reveal the presence of non-radiative grain boundaries and dislocations in the investigated samples. Annealing at 650 degrees C for 36 h significantly improves the structural quality and the compositional homogeneity of the Te-doped crystals. CL spectra of the ternary alloy were found to show features similar to those reported for GaSb.journal articlehttp://dx.doi.org/10.1002/pssc.200460522http://onlinelibrary.wiley.commetadata only access538.9Liquid-Phase EpitaxySb-Rich SolutionsHigh-Quality GasbGallium AntimonidePhotoluminescenceGrowthInsbFísica de materiales