Miranda Pantoja, José MiguelSebastián Franco, José LuisMuñoz San Martín, Sagrario2023-06-202023-06-201998-01-120003-695110.1063/1.120696https://hdl.handle.net/20.500.14352/58957© 1998 American Institute of Physics. This work has been supported by the TMR programme of the European Community, under Contract No. ERBFMRXCT960050. The authors wish to express their appreciation to Professor D. Pardo and Dr. T. González of the University of Salamanca for their interesting conversations. Herdis Buck is also acknowledged for her linguistic revision of the manuscript.The maximum entropy method is presented in this letter as a highly interesting procedure for the investigation of high frequency noise properties of bulk semiconductors and electron devices at microscopic level. A Monte Carlo simulation of the hot electron velocity fluctuations in bulk GaAs has been performed to illustrate the efficiency and usefulness of this procedure. Comparisons with the most popular techniques presently used in Monte Carlo simulations of noise have also been performed. (C) 1998 American Institute of Physics.engjournal articlehttp://dx.doi.org/10.1063/1.120696http://web.ebscohost.comhttp://ieeexplore.ieee.org/xpl/abstractAuthors.jsp?arnumber=4898139open access537Semiconductor-MaterialsElectronic NoiseSimulationDiffusionDevicesDiodes.ElectricidadElectrónica (Física)2202.03 Electricidad