Cremades Rodríguez, Ana IsabelDomínguez-Adame Acosta, FranciscoPiqueras De Noriega, Francisco Javier2023-06-202023-06-201993-11-010021-897910.1063/1.354189https://hdl.handle.net/20.500.14352/58865© 1993 American Institute of Physics. This work has been supported by DGICYT (Project PB-1017). Thanks are due to Dr. E. Wolfgang for drawing our attention to the CL cross sectional measurements.Cathodoluminescence (CL) in the scanning electron microscope has been used to study the upper surface and cross-sectional samples of chemical vapor deposited diamond films. The CL emission is mainly localized at the grain boundaries of the columnar grains. The concentration of dislocation related radiative centers is higher in boundaries parallel to the growth axis than in boundaries parallel to the sample surface. The opposite occurs with the concentration of centers related to the presence of nitrogen.engjournal articlehttp://dx.doi.org/10.1063/1.354189http://scitation.aip.org/open access538.9Sintered DiamondImpuritiesCrystalsFísica de materiales