Castaldini, A.Cavallini, A.Fraboni, B.Fernández Sánchez, PalomaPiqueras De Noriega, Francisco Javier2023-06-202023-06-2019970003-695110.1063/1.117228https://hdl.handle.net/20.500.14352/59204This research has been partially supported by the Cooperation Programme ‘‘Azione Integrata’’ between Italy and Spain and by DGICYT (Project PB 93-1256). The authors are indebted to the Japan Energy Corporation for Corporation for the undoped and doped samples.We have investigated the electrical and optical properties of the deep levels responsible for the 1.4-1.5 eV luminescence band usually observed in II-VI compounds. We compared the energy levels found by cathodoluminescence and junction spectroscopy methods for semi-insulating (CdTe:Cl and Cd_(0.8)Zn_(0.2)Te) and semiconducting samples (undoped CdTe). The techniques utilized were deep level transient spectroscopy (DLTS) on semiconducting samples and photoinduced current transient spectroscopy and photo-DLTS on high resistivity materials. These last two techniques are complementary and allow the determination of the trap character (donor/acceptor). Three acceptor levels are seen in the electrical transient data at E(upsilon)+0.12, 0.14, and 0.16 eV with hole capture cross sections of 2x10^(-16), 1x10(-16), and 4X10^(-17) cm(2), respectively. The lowest level is seen only in Cl doped material corroborating the literature optical and electron spin resonance identification of a level at E_(upsilon)+0.12 eV as being a V_Cd+Cl_Te, donor-acceptor pair center. All three levels may be present in the 1.4 eV luminescence band.engjournal articlehttp://dx.doi.org/10.1063/1.117228http://scitation.aip.org/content/aip/journal/apl/69/23/10.1063/1.117228open access538.9Cadmium TellurideTransient SpectroscopyPoint-DefectsDeep LevelsCrystalsCathodoluminescenceCd_(1-x)Zn_xTeDetectorsClFísica de materiales